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GA 4666

?

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The GA 4666 is a two-stage self-biased wide band monolithic low noise amplifier.The circuit is manufactured with a standard pHEMT process: 0.25um gate length, viaholes through the substrate, air bridges and electron beam gate lithography. lt is supplied inlead-free package.

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The GA 4666 is a two-stage self-biased wide band monolithic low noise amplifier.The circuit is manufactured with a standard pHEMT process: 0.25um gate length, viaholes through the substrate, air bridges and electron beam gate lithography. lt is supplied inlead-free package.

Main Features

● Broadband performance 8-18GHz
● 2.0dB noise figure
● 15dBm power at 1dB compression
● 23dB gain
● Low DC power consumption
● 16L-QFN3X3 SMD package

Main Electrical Characteristics

Tamb.=+25°C,Vd1=Vd2=+5V,P1& N2=GND

Symbol	Parameter	Min	Typ	Max	Unit
Freg	Frequency range	8		18	GHz
NF	Noise Figure		1.8	2	dB
G	Gain	21	22	23	dB
IP3	3^rd order intercept point		26		dBm
S11	Input return loss (2)	-17.86	-16		dB
S22	Output return loss (2)		-16	-12	dB
IP3	3^rd order intercept point		26		dBm
P1dB	Output power at 1 dB gain comp (2)(3)	13	15	16	dBm
Vd1, 2	Drain bias voltage		6		V
ld	Drain bias current	40	55	70	mA

Absolute Maximum Ratings⁽¹⁾

Tamb.= +25°C

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	5.5	V
Pin	RF input power	10	dBm
Top	Operating temperature range	-40 to +85	°C
Tj	Maximum Junction temperature⁽²⁾	175	°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2)Thermal Resistance channel to ground paddle

Recommended Operating Range

Symbol	Parameter	Values	Unit
Vd	Drain bias voltage	4 to 5	V
Pin	Maximum peak input power overdrive	5	dBm

Temperature Range

Ta	Operating temperature range	-40 to +95	°C
Tstg	Storage temperature range	-55 to +150	°C

Gain vs.Frequency

NF vs. Frequency

P-1dB vs .Frequency

Output return loss vs. Frequency(S22)

Input return loss VS.Frequency (S11)

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