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What is

GA777

?

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The main function of the GA777 beam control special circuit is to convert theinput parallel 6-bit data into 6 pairs
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Overview

The main function of the GA777 beam control special circuit is to convert theinput parallel 6-bit data into 6 pairs

Technical specifications

2.1 Function description

The 6 bits of data entered are: Dl, D2, D3, D4, D5, D6.The output 12-bit differential signal is:$1+&S1-S6+&S6- where + is the inphase output and_is the inverse-phase output.VOPT corresponds to the differential output high level voltage value.

2.2 Principle description

The ASIC is composed of digital and analog parts. The digital part iscomposed of a series and transfer shift register, a buffer register, a multiplexswitch and other functional circuits. The analog part is composed of voltageconversion circuit and poweron reset circuit.

After the power on the circuit, the poweron reset module begins to work.the digital part of the register, clock, data for zeroing, about 10us end zeroing,the digital part of the circuit with the clock to achieve the data series and conversion,through the DARY signal control of the parallel data into the analog part of thecircuit, the output after driving amplification.

2.3 Logic function diagram

See Figure l for the logic function diagram.

2.4 Truth Table

The chip is divided into six output drivers, Each circuit works in a similarway, TTl level control signal input to the circuit is converted to produce gate controlvoltage required to control microwave switch and attenuator of gallium arsenide device. Inputlevel swing can be 0.8V~2.0V(VIL=0.8V, VIH=2.0V) when the circuit is working. Theoutput level is converted to the oupu level with a swing of -0. 5V~0V(VEE=-5.0V VOPT-0V)in typical applications. The true values are shown in Table 1.

Table l Truth table

Six input signals Six output signals
Dx AX_DX,BX= DX
Where X=1~6

2.5 Electrical parameters

The working environment is shown in Table 2

Table 2Work environment

Recommended Working Conditions Absolute maximum rating
Operating voltage vpp):4.5V~5.5V 0perating voltage (VDD):7V
Working voltage(vEE): -5.5V~-4.5V Operating voltage(VEE):-6V
Working ambient temperature(TA):-55°℃~125°C /
Storage temperature:-65°C~150C /

The parameters are shown in Table 3, and the timing diagram of ACcharacteristics is shown in Figure 3.

Table 3 Electrical parameters

Characteristics Symbols ConditionsUnless otherwise specifiedVCC-5V vEE- -5V vGND-oV, VOPT=ov,TA=25°C Limiting Value Units
Minimum Maximum
Static current(vcc) Icc 0utput no-load - 5 MuA
Input signal high level threshold VIH   - 2.0 V
Input signal low threshold VIL   0.8 - V
Input high level leakage current IIH Vcc=5.5V V1=5.5V - 1 MuA
Input low-level leakage current IIL Vcc=5.5 VVI -0V - -1 MuA
Differential drive output high level voltage VOH IOH=-1mA VEE=-5.0V 0.2 - V
Differential drive output low-level voltage VOL IOL=-1mA VEE=-5.0V   4.8 V
Dynamic Current(vcc) IDD Each input f= 10MHz at the sametime - 1 mA
Dynamic Current (vEE) IEE When each input f=1MHzsimultaneously(no load) - 3 mA
Note 1: All voltages are based on GND. GND=0V, the current is positive with the inletdevice outlet.
Note 2:The equivalent value of output load in dynamic parameter test is CL-20pF

Chip shape and PAD definition

3.1 Chip

GA777 chip layout is shown in Figure 4.

Chip size:2360umx1200umx400um(excluding the scribing slot);
xx(including the scribing slot).

PAD size :90 x90.

Chip is N type substrate, substrate potential vop or suspended.

3.2 PAD coordinates and instructions

GA777 PAD coordinates and descriptions are shown in Table 4.

Table 4 PAD coordinates and description(the origin of coordinates is the lowerleft point of the chip)

Serial number PAD name Coordi nate X(u) Coordi natey Y (um) I/O Features
1 Vcc 566 1080 P +5V power supply
2 VEE 151 785 P -5V power supply
3 VOPT 151 558 P 0ptional output power supply
4 GND 151 386 P referentially
5 S1+ 181 157 O Same way output lst way
6 S1- 365 157 O Reverse output route 1
7 S2+ 548 157 O Same way output 2nd way
8 S2- 731 157 O Reverse output route 2
9 S3+ 914 157 O Same way output 3rd way
10 S3- 1097 157 O Reverse output route 3
11 S4+ 1281 157 O Same direction output route 4
12 S4- 1464 157 O Reverse output route 4
13 S5+ 1647 157 O Same direction output route 5
14 S5- 1830 157 O Reverse output route 5
15 S6+ 2013 157 O Same direction output route 6
16 S6- 2197 157 O Reverse output route 6
17 D6 2235 403 I Enter Route 6(alternate input port)
18 D5 2235 592 I Enter Route 5(alternate input port )
19 VEE 2235 767 P -5V power supply
20 Vcc 2060 1080 P +5V power supply
21 D6 1860 1080 I Enter route 6
22 D5 1650 1080 I Enter route 5
23 D4 1440 1080 I Enter route 4
24 D3 1230 1080 I Enter route 3
25 D2 1020 1080 I Enter route 2
26 D1 810 1080 I Enter route 1

Precautions

4.1 Configuration requirements

vDD and VEE need to be configured with 0.luF filter capacitor to GN.

4.2 Packaging Requirements

The chip packaging shall comply with the provisions of GJB 2835-1997, and bepacked in a special anti-static material box and vacuum-packed with anti-staticaluminum film, The outer packaging shall be in a carton. The chip packing box shall beaccompanied with the product certificate.

4.3 Storage requirements

The chip should be packed in the corresponding packaging container providedby our company, and the packaging container should be stored in therelative humidity ofThe drying box or drying tower in the range of 20%RHto 75%RH, and keep thetemperature range of 5'C to 30C, The effective storage period of the chipmeeting the above conditions is 3 years. If more than the effective storageperiod,according to user requirements for reinspection,reinspection can continueto supply.

4.4 Transportation requirements

The product should be protected from rain and snow and mechanical impactduring transportation.

4.5 Anti-static requirements

Devices in accordance with this specification are electrostatic sensitive devices, and antistatic measures should be taken throughout storage, transportation and use.

 

 

 

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