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Variable Gain Amplifier

Product	to Replace	Frequency (GHz)	Channels	Max Gain （dB）	Max Gain control range （dB）	Step forward （dB）	Noise figure （dB）	Channel Isolation (dB)	Input VSWR	Output VSWR	P-1 (dBm)	OIP3 (dBm)	Power consumption （V/mA）	Size （mm）
GAG0201	HMC681	0.1~2.0	1	38	31.5	0.5	2.5	-	1.5	1.5	21	37	+5V /160uA	5.0×5.0×0.85 LGA
GAG0202	RFDA0047	0.4~3.8	2	14.3	31.5	0.5	3.5	50	1.2	1.5	21	38.6	+5V /168 mA	7.0×7.0 LGA
GAG0203	-	1.3~2.8	4	26.5	31.5	0.5	9	39	2.1	2.1	17	30	+3.3V/420mA	8.0×8.0×0.81 LGA
GAG0204	BGU8822/A	0.4~2.6	2	37	31	1	0.8	50	1.6	1.4	22	33	+5V /240 mA	5.0×5.0×0.73 LGA
GAG0204	-	0.4~1.1	4	28.5	31.5	0.5	11	45	1.6	1.8	18	35	+3.3V/400mA	8.0×8.0×0.73 LGA
GAG0206	TQC9311	0.4~3.8	2	14.4	31.5	0.5	3.7	55	1.3	1.4	21	36	+5V /168 mA	7.0×7.0 LGA

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Related Products

GA5057VF

7.1-8.8GHz Power Amplifier MMIC FEATURES High Output Power: 33.0dBm(typ.) High Linear Gain: 30.0dB(typ.) Low VSWR Broad Band: 7.1～8.8GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package(VF)

GA5061VF

FEATURES ・High Output Power: Pout=34.0dBm (MAX.) ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The GA 5061VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the9.5 to13.5GHz frequency range.

GA9354C

The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

GA29F040

The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

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