Products

What is

GA 4667a

?

+
The KP 4667a is a wide band monolithic medium power amplifier.It is designed for a wide range of applications, from military to commercial communication systems
div[class^="e_richText"] .table table.buyao td {border:none !important;}

7-20GHz Medium

PowerAmplifier

GaAs Monolithic MicrowaveICinSMDpackage

Description

The KP 4667a is a wide band monolithic medium power amplifier.It is designed for a wide range of applications, from military to commercial communication systems

It is ESD protected on RF ports thanks to DCspecific filter circuits.

It is available in lead-free SMD package.

Main Features

● Broadband performance 7-20.5GHz

● Self-biased

● 24dB gain @2.5dB noise figure

● 17.5dBm Output power@1dB compression

● DC power consumption, 120 mA @4.2V

● 24L-QFN4X4 SMD package(Ceramic package)

● ESD protected

Main Characteristics

Tamb.=25°C,Vd= 4.2V

Symbol Parameter Min Typ Max Unit
Fop Input frequency range 7   20 GHz
G Small signalgain 22.7 24 24.7 dB
NF Noise Figure 2.2 2.5 2.7 dB
P-1dB Output power at1dB gain compression 17 17.5 18 dBm
ld Bias current 70 120 135 mA

Electrical Characteristics

Tamb.=25°C,Vd=4.2V

Symbol Parameter Min Typ Max Unit
Fop Operating frequencyrange 7   20.2 GHz
G Gain
(7-9GHz)
(9-17GHz)
(17-20GHz)
  24.6
23.4
23.1
  dB
NF Noisefigure(7-18 GHz)   2.7   dB
RLin InputReturn Loss   -10   dB
RLout OutputReturn Loss   -15   dB
IP3 OutputIP3   26   dBm
P-1dB

Pout at 1dB gain compression

(7-13 GHz)
(13-20 GHz)

  17.5
16.8
  dBm
dBm
lsol Reverseisolation   40   dB
Vd Drain bias voltage   4.2   V
ld Drain bias current   120   mA

 

Absolute Maximum Ratings(1)

Tamb=+25°C

Symbol Parameter Values Unit
Vd Drain bias voltage 5V V
ld Powersupply quiescent current 135 mA
Pin RF input power(2) 18 dBm
Top Operating temperature range -40 to +85 °C
Tj Junction temperature(3) 175 °C
Tstg Storage temperature range -55 to +125 °C

Typical Measured Performance

Tamb=+25°C,Vd=+4.2VId=120mA

Package outline

 

Inquire Now

Note: Please leave your email address, our professionals will contact you as soon as possible!

Related Products

GA9354C


The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

GA29F040


The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

Business license

Address: Beijing Tongzhou District Xiji Town, Wanganyuan Innovation Center 1-198