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We has volume-produced high-precision analog-to-digital converters (ADC), digital-to-analog converters (DAC), and clock driver chips, all of which have achieved industry-leading specifications. Additionally, these products are capable of seamless pin-to-pin replacements with other advanced chip products. Our ADC and DAC products are renowned for their exceptional accuracy, low power consumption, and high speed, meeting the diverse application requirements ranging from industrial automation to communication systems, and medical devices. These products are meticulously designed to ensure stable and reliable performance under various harsh environments. Clock driver chips represent another core technology of ours, providing precise timing control for high-speed data transmission and being indispensable components in many high-performance computing and communication systems. Our clock driver chips feature low jitter, high-frequency stability, and excellent phase noise performance, ensuring system synchronicity and overall functionality. The volume-produced MCU chips are celebrated for their high performance, low power consumption, and extensive integrated functionalities, catering to a wide range of applications from automotive, smart home devices to industrial automation, and IoT devices. These products are carefully engineered to deliver stable and reliable performance under stringent environmental conditions.
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Roadmap of IC

Application of ICs in the communication system
GaAs RF Switch
Product Type Frequency (GHz) Insertion loss
(dB))
Isolation
(dB)
VSWR switching speed(ns) control signal(V/V) Size
(mm)
GAC0130 2×SPDT 0.3~2 8.5 50 1.5 60 0/+5 3 × 3 QFN 
GAC0135 2×SPDT 0.3~2 2 50 2 60 0/+5 4 × 4 QFN 
GAC0102 SPST 20~22.5 2.5 60 1.2 20 0/-5 4 × 4 QFN 
GAC0113 SPST 0.5~50 0.6 25 1.2 20 10mA/-5V 5 × 3.4 BGA 
GAC0114 SPST 0.5~18 1.5 40 1.4 20 0/+5 3 × 3 QFN
GAC0120 SPST DC~40 0.8 30 1.4 20 0/-5 3 × 3 QFN 
GAC0122 SPST DC~40 1 30 1.3 30 0/+5 3.7×2.6×0.1
GAC0125 SPST DC~18 1.7 50 1.2 20 0/-5 2.3×1.4×0.1
GAC0128 SPST DC~18 1.6 60 1.3 20 0/-5 3.1×1.63×0.1
GAC0137 SPST 0.5~18 1.2 40 1.3 30 0/+5 1.5×1.2×0.1
GAC0101 SPDT DC~2 0.6 36 1.35 15 0/-40 1×1.2×0.1
GAC0103 SPDT 0.1~4 1.2 40 1.4 60 0/+5 3×3×1.1SOP
GAC0106 SPDT 25~40 1.8 32 1.3 30 0/+5 1.2×1.05×0.1
GAC0107 SPDT 0.5~50 0.6 28 1.4 20 10mA/-10mA 1.25×0.78×0.1
GAC0108 SPDT DC~18 2 45 1.3 20 0/-5 1.5×1.5×0.1
GAC0109 SPDT DC~7 0.5 25 1.3 500 3.3 1 × 1 QFN 
GAC0112 SPDT DC~7.125 0.5 30 1.4 265 1.8 1 × 1 QFN 
GAC0115 SPDT 0.5~18 2 47 1.4 20 0/+5 1.5×1.2×0.1
GAC0117 SPDT DC~12 1 50 1.3 20 0/-5 1.5×1.5×0.1
GAC0118 SPDT 0.1~4 0.5 43 1.4 300 1.8 4 × 4 QFN 
GAC0119 SPDT 2~18 1.1 28 1.4 20 0/+5 0.82×1.8×0.1
GAC0121 SPDT DC~7 1 55 1.2 10 0/-5 1.44×1.12×0.1
GAC0124 SPDT DC~6 0.8 44 1.4 200 3.3 1.5 × 1.5 DFN 
GAC0126 SPDT 20~22.5 2.2 50 1.3 20 0/-5 1.2×1.1×0.1
GAC0132 SPDT 0.1~6 1.4 45 1.4 300 0/+5 4 × 4 QFN 
GAC0133 SPDT DC~15 1.2 50 1.3 20 0/-5 2.05×1.04×0.1
GAC0134 SPDT 25~40 2 36 1.5 20 0/-5 1.05×1.2×0.1
GAC0136 SPDT DC~12 1.3 50 1.5 40 0/+5 1.6×1.0×0.1
GAC0138 SPDT 0.1~8 0.75 55 1.3 250 1.8 4 × 4 QFN 
GAC0140 SPDT DC~6 1 41 1.5 15 0/-40 0.95×1.8×0.1
GAC0142 SPDT DC~12 1.3 50 1.3 45 0/+5 4×4QFN
GAC0123 SP3T DC~6 2.3 50 1.4 20 0/+5 1.5×2×0.1
GAC0127 SP3T DC~18 1.8 45 1.3 20 0/-5 1.5×1.5×0.1
GAC0111 SP4T DC~6 1.4 39 1.5 100 0/+5 4 × 4 CQFN 
GAC0116 SP4T DC~10 1.5 50 1.4 30 0/+3.3 1.6×1.9×0.1
GAC0131 SP4T DC~4 1.4 35 1.3 60 0/+5 3 × 3 QFN 
GAC0141 SP4T DC~4 1.2 39 1.4 100 0/+5 1.5×1.5×0.1
GAC0104 SP5T 0.1~50 1.2 43 1.4 20 10mA/-10mA 1.62×1.54×0.1
GAC0105 SP5T 0.4~4 0.6 55 1.2 300 1.8 4 × 4 QFN 
GAC0139 SP5T 0.1~8 1.2 55 1.4 280 1.8 4 × 4 QFN 
GAC0110 SP8T 0.5~50 0.8 35 1.5 20 -15mA/0V 2.6×1×0.1
GAC0129 SP8T 0.5~50 2.2 40 2 20 -15mA/0V 2.37×1.27×0.1
SOI RF Switch
Product to Replace Type Frequency (GHz) Insertion loss
(dB)
Isolation
(dB)
switching speed(ns) control signal(V/V) Size
(mm×mm)
GAE0201 PE42452 SP5T 0.45~4 0.9 53 160 3.6/1.8 4×4 QFN
GAE0202 - SPDT DC~7.125 0.58 22 150 3.3/1.8 1×1 QFN
GAE0203 RFSW6024 SPDT 0.005~6 0.8 63 230 3.3/1.8 4×4 QFN
GAE0204 - SPDT 0.1-8 0.8 60 350 3.3/1.8 4×4 QFN
GAE0205 PE42424 SP5T 0.4~6.5 1.3 58 300 3.6/1.8 4×4 QFN
GAE0206 PE42420 SPDT 0.1~7.125 1.2 63 305 3.3/1.8 4×4 QFN

 

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GA9354C


The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

GA29F040


The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

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