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We has volume-produced high-precision analog-to-digital converters (ADC), digital-to-analog converters (DAC), and clock driver chips, all of which have achieved industry-leading specifications. Additionally, these products are capable of seamless pin-to-pin replacements with other advanced chip products. Our ADC and DAC products are renowned for their exceptional accuracy, low power consumption, and high speed, meeting the diverse application requirements ranging from industrial automation to communication systems, and medical devices. These products are meticulously designed to ensure stable and reliable performance under various harsh environments. Clock driver chips represent another core technology of ours, providing precise timing control for high-speed data transmission and being indispensable components in many high-performance computing and communication systems. Our clock driver chips feature low jitter, high-frequency stability, and excellent phase noise performance, ensuring system synchronicity and overall functionality. The volume-produced MCU chips are celebrated for their high performance, low power consumption, and extensive integrated functionalities, catering to a wide range of applications from automotive, smart home devices to industrial automation, and IoT devices. These products are carefully engineered to deliver stable and reliable performance under stringent environmental conditions.
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Digital attenuator
Product Frequency (GHz) Contol Bit Insertion loss (dB) Attenuation range (dB) Step forward
(dB)
Step forward
(dB)
Attachment Phase shift(Deg) Input
VSWR
Output
VSWR
control signal(V/V) Size
(mm)
GAD0101 DC-2 6 1.8 0.5~31.5 0.5 ±(0.3+5%ATT) ±3 1.3 1.3 0/-5 2.94×1.2×0.1
GAD0102 DC-14 4 0.2 0~3.75 0.25 ±(0.3+5%ATT) - 1.3 1.3 - 0.65×0.65×0.1
GAD0103 DC-8 6 2.4 1~51 1 ±(0.2+4%ATT - 1.4 1.3 0/-5 3.5×1.4×0.1
GAD0104 18-50 4 4.1 0~15 1 ±(0.2+6%ATT - 2 2 0/+5 1.8×1.1×0.1
GAD0105 0.4-4 6 2.6 0.5-31.5 0.5 ±(0.2+5%ATT) - 1.5 1.5 0/+5 1.5×1.5×0.1
GAD0106 DC-6 5 2.1 0~31 1 ±(0.3+6%ATT) - 1.3 1.2 0/+5 4 × 4 CQFN 
GAD0107 DC-4 - - 0~1 - ±0.05dB - 1.2 1.3 - 5.2×5.2×1.78
GAD0108 1-18 1 0.7 0~10 - ±0.3dB - 1.3 1.3 0/-5 0.82×1.1×0.1
GAD0109 32-40
5
6.8 1~31 1 ±(0.2+6%ATT) - 1.6 1.6 0/+5 2.29×0.95×0.1
GAD0110 DC-18 6 4.5 0~31.5
0.5
±(0.2+4%ATT - 1.3 1.3 0/+5 2.4×1.2×0.1
GAD0111 0.5-18 5 2.7 0~15.5 0.5 ±(0.2+5%ATT ±4 1.4 1.3 0/-5 2.7×1.4×0.1
GAD0112 DC-6 6 1.4 0.25~15.75 0.25 ±(0.2+5%ATT) ±6 1.3 1.3 0/-5 2.94×1.2×0.1
GAD0113 DC-6 5 2.1 0~31 1 ±(0.3+6%ATT - 1.3 1.2 0/+5 1.5×1.5×0.1
GAD0114 0.8-2 7 1.8 0~31.75 0.25 ±(0.2+6%ATT - 1.1 1.1 0/-5 3×1.2×0.1
GAD0115 0.5-18 6 3.9 1~63 1 ±(0.1+5%ATT - 1.4 1.3 0/-5 3.6×1.45×0.1
GAD0116 0.5-8.5 3 1.4 43545 3 ±(0.2+4%ATT) - 1.5 1.3 0/-5 2.2×1.45×0.1
GAD0117 0.5-18 3 2.1 5~35 5 ±(0.2+3%ATT) - 1.3 1.2 0/-5 2.1×1.4×0.1
GAD0118 DC-18 1 1.2 0~10 20 ±0.5dB - 1.2 1.2 0/-5 1.1×1.45×0.1
GAD0119 DC-4 5 1.3 0~7.75 0.25 ±(0.2+5%ATT - 1.4 1.4 0/+5 3×3×0.9
GAD0120 0.5-18 6 3.4 0.5~31.5 0.5 ±(0.2+6%ATT) - 1。4 1.4 0/-5 3.1×1.45×0.1
GAD0121 DC-18 3 3 0~35 5 ±(0.2+4%ATT) ±5 1.4 1.4 0/+5 1.8×1.2×0.1
GAD0122 0.1-40 5 4 0~31 1 ±(0.2+4%ATT - 2 1.8 0/+5 2.3×1×0.1
Digital Phase Shifter
Product Frequency (GHz) phase shift range
(Deg)
Contol Bit Insertion loss (dB) Maximum phase shift
Error (Deg)
Input
VSWR
Output
VSWR
All states
Amplitude change (dB)
control signal(V/V) Size
(mm)
GAE0101 0.8-2.7 0~354.375 6 13.4 ±6 1.4 1.3 ±1.2 0/-5 4.6×2.9×0.1
GAE0102 6-18 0~354.375 6 12.5 ±5 1.6 1.4 ±1.3 0/+5 3.2×3.5×0.1
GAE0103 32-40 0~354.375 6 11 ±6 1.6 1.6 ±1.2 0/+5 3.25×1.6×0.1
GAE0104 0.99-1.13 0~360 6 3.7 ±6 1.1 1.3 ±0.2 0/-5 6.2×2×0.1
Digital Delayer
Product Frequency (GHz) delay range(ps) Contol Bit Insertion loss (dB) delay accuracy(ps) Input
VSWR
Output
VSWR
control signal(V/V) Size
(mm)
GAF0101 0.1-0.8 0~1575 6 7 20 1.3 1.5 0/+5 7 × 7 QFN 
GAF0102 2-18 0~336 3 9 48 1.4 1.3 0/+5 3×2.8×0.1
GAF0103 2-18 0~315 6 19.5 5 1.4 1.4 0/+5 2.4×3.5×0.1
GAF0104 2-18 0~315 6 13 5 1.6 1.6 0/+5 3×3×0.1
GAF0105 9-10.2 0~364 3 6.5 52 1.2 1.2 0/+5 3×3×0.1
GAF0106 0.7-6 0~635 7 10 10 1.3 1.3 0/+5 3.5×3. 9×0.1
GAF0107 0.7-6 0~640 1 5.3 - 1.1 1.1 0/+5 2.65×3. 9×0.1
SDF0108 2-18 0~320 1 9 - 1.4 1.4 0/+5 1.8×2.5×0.1
SDF0109 2-18 0~384 1 9 - 1.4 1.4 0/+5 2.5×2.5×0.1
SDF0110 2-18 0~378 6 12 6 1.4 1.4 0/+5 3×3×0.1
SDF0111 6-18 0~155 5 5 5 1.4 1.4 0/+5 3×3×0.1
SDF0112 0.8-4 0~1778 7 18.3 14 2 2 0/+5 5×5.8×0.1
SDF0113 0.7-6 0~640 1 5.8 - 1.2 1.2 0/+5 2.5×3. 9×0.1

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The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

GA29F040


The GA29F040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The GA29F040 is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard GA29F040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the GA29F040 has separate chip enable (CE#) and output enable (OE#) controls. Flash memories augment EPROM functionality with incircuit electrical erasure and programming. The GA29F040 uses a command register to manage this functionality. The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility. Flash technology reliably stores memory con- tents even after 100,000 erase and program cycles. The cell is designed to optimize the erase and program mechanisms. In addition, the combi- nation of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The GA29F040 uses a 5.0V 10% VCC supply to per- form the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.

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